SK hynix 16GB ECC Registered DDR4 3200 MHz Server RAM Memory Module
Scan code: LN125301
Manufacturer code: HMA82GR7CJR8N-XNTG
£89.99
SK hynix 16GB ECC Registered DDR4 3200 MHz Server RAM Memory Module
16GB (1x16GB) SK hynix HMA82GR7CJR8N-XNTG DDR4 Server RAM, PC4-25600 (3200), ECC Registered, CAS 22-22-22, 1R, 1.2V
Scan code:
LN125301
Manufacturer code:
HMA82GR7CJR8N-XNTG
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Product Overview
SK hynix 16GB ECC Registered DDR4 3200MHz Server RAM
SK hynix Registered DDR4 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems such as servers and workstations. Features • Power Supply: VDD=1.2V (1.14V to 1.26V).
• VDDQ = 1.2V (1.14V to 1.26V).
• VPP - 2.5V (2.375V to 2.75V).
• VDDSPD=2.25V to 2.75V.
• 16 internal banks.
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available.
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600.
• Bi-Directional Differential Data Strobe.
• 8 bit pre-fetch.
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop).
• Supports ECC error correction and detection.
• On-Die Termination (ODT).
• Temperature sensor with integrated SPD.
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported.
• Internal Vref DQ level generation is available.
• Write CRC is supported at all speed grades.
• DBI (Data Bus Inversion) is supported(x8).
• CA parity (Command/Address Parity) mode is supported.
SK hynix Registered DDR4 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems such as servers and workstations. Features • Power Supply: VDD=1.2V (1.14V to 1.26V).
• VDDQ = 1.2V (1.14V to 1.26V).
• VPP - 2.5V (2.375V to 2.75V).
• VDDSPD=2.25V to 2.75V.
• 16 internal banks.
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available.
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600.
• Bi-Directional Differential Data Strobe.
• 8 bit pre-fetch.
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop).
• Supports ECC error correction and detection.
• On-Die Termination (ODT).
• Temperature sensor with integrated SPD.
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported.
• Internal Vref DQ level generation is available.
• Write CRC is supported at all speed grades.
• DBI (Data Bus Inversion) is supported(x8).
• CA parity (Command/Address Parity) mode is supported.