Scan code:
LN100799
Manufacturer code:
HMABAGR7C4R4N-XST4
SK Hynix 128GB ECC Registered DDR4 3200 MHz Server RAM Memory Module
128GB (1x128GB) SK hynix HMABAGR7C4R4N-XST4 DDR4 Server RAM, PC4-25600 (3200), ECC Registered, CAS 22-22-22, 8R, 1.2V
Scan code:
LN100799
Manufacturer code:
HMABAGR7C4R4N-XST4
Order now and get it tomorrow, Fri 29th Jan
From
£33.62
/ month (APR 14.9%)
Delivery Options
- By DPD On 29th Jan to your specified address. | £5.48 Receive SMS with one-hour delivery window Weekend, timed and European delivery options are available at checkout
- Collect instore Collect from our Bolton store, BL6 6PE | Free
- SCANPROTECT Protect against installation damage for 28 days. More info
Product Overview
SK hynix Registered DDR4 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems such as servers and workstations. Features
• Power Supply: VDD=1.2V (1.14V to 1.26V).
• VDDQ = 1.2V (1.14V to 1.26V).
• VPP - 2.5V (2.375V to 2.75V).
• VDDSPD=2.25V to 2.75V.
• Functionality and operations comply with the DDR4 SDRAM datasheet.
• 16 internal banks.
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available.
• Data transfer rates: PC4-3200.
• Bi-Directional Differential Data Strobe.
• 8 bit pre-fetch.
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop).
• Supports ECC error correction and detection.
• On-Die Termination (ODT).
• Temperature sensor with integrated SPD.
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported.
• Internal Vref DQ level generation is available.
• Write CRC is supported at all speed grades.
• DBI (Data Bus Inversion) is supported(x8).
• CA parity (Command/Address Parity) mode is supported.
• VDDQ = 1.2V (1.14V to 1.26V).
• VPP - 2.5V (2.375V to 2.75V).
• VDDSPD=2.25V to 2.75V.
• Functionality and operations comply with the DDR4 SDRAM datasheet.
• 16 internal banks.
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available.
• Data transfer rates: PC4-3200.
• Bi-Directional Differential Data Strobe.
• 8 bit pre-fetch.
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop).
• Supports ECC error correction and detection.
• On-Die Termination (ODT).
• Temperature sensor with integrated SPD.
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported.
• Internal Vref DQ level generation is available.
• Write CRC is supported at all speed grades.
• DBI (Data Bus Inversion) is supported(x8).
• CA parity (Command/Address Parity) mode is supported.
SK Hynix 128GB ECC Registered DDR4 3200 MHz Server RAM Memory Module
![SK Hynix 128GB ECC Registered DDR4 3200 MHz Server RAM Memory Module]()